2830 s. fairview st. santa ana, ca 92704 ph: 714.979.8220 f ax: 714.557.5989 msc 10 5 3 . p df updated: november 1998 TD3170 electrical characteristics @ 25 o c features ? v ery thin construction ? passivated mesa structure for very low leakage reverse currents ? epitaxial structure minimizes forward voltage drop ? hermetically sealed, extremely low profile ceramic seal package ? diode assembly has matched thermal coe f ficient of expansion ? w eldable / solderable gold plated copper interconnects applications ? designed for solar cell string protection ? extreme t emperature cycling environments ? generically similar to product used on the international space station alpha solar array blocking diode 200 v olts 10 amps screening l microsemi document ps 1 1.5 junction t emperature range - 1 15 to +175 o c mechanical outline s y m b o l c h a r a c t e r i s t ic c o n d i t i o n s m a x u n i t s i r r e v e r se ( leakage) cu r r en t v r = 180 vdc 0 . 5 ua m ps v f 1 fo r w a r d vo l t age i f = 0 . 1 a pu l se t es t p w = 300 m s, d / c < 2% 710 m vo l t s v f 2 fo r w a r d vo l t age i f = 0 . 5 a pu l se t es t p w = 300 m s, d / c < 2% 775 m vo l t s v f 3 fo r w a r d vo l t age i f = 2 . 0 a pu l se t es t p w = 300 m s, d / c < 2% 850 m vo l t s v f 4 fo r w a r d vo l t age i f = 5 . 0 a pu l se t es t p w = 300 m s, d / c < 2% 875 m vo l t s v f 5 fo r w a r d vo l t age i f = 10 a pu l se t es t p w = 300 m s, d / c < 2% 950 m vo l t s b v r b r eakdo w n vo l t age i r = 100 ua ( m i n) 20 0 vo l t s
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